A 4.5 kV Fast Recovery Diode Platform for High-Current IGBTs
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262124
Proceedings: PCIM Europe 2024
Pages: 5Language: englishTyp: PDF
Authors:
Vobecky, J.; Vemulapati, U.; Stencel, M.; Hylsky, J.; Radvan, L.; Meier, U.; Corvasce, C.
Abstract:
A scalable fast recovery diode platform of 4.5 kV class rated to 4 - 5 kA was developed and tested with the aim of increasing the current handling capability of the VSC-HVDC with MMC topology. An increased robustness is achieved using the diode wafers with diameter beyond 100 mm. They are mounted in hermetic housings with pole piece diameters of 110, 119, and 143 mm. The surge current capability then grows from 80 to 120 kA proportionally to device area likewise the maximal average ON-state current. A wide safe operating area (SOA) is demonstrated with turn-off current up to 6 kA, di/dt up to 10 kA/mus, Tj up to 140 °C, and DC link voltage V(DC) up to 3.6 kV. This SOA can be further expanded depending on testing capability. Safe operation at low current densites at T = 25 °C and VDC ≤ 3.6 kV is proved as well. The cosmic ray withstanding capability is below 1 FIT up to 3.4 kV(DC) and 400 FIT at 3.6 kV(DC).