Active Thermal Control of SiC MOSFETs Utilizing Transient Thermal Characterization

Abstract:
Effectively managing the temperature of Silicon Carbide (SiC) MOSFETs is essential for optimizing performance, especially in applications demanding high reliability and energy efficiency. Traditional thermal management techniques often struggle with the rapid thermal transients characteristic of these semiconductors, leading to potential overheating and reduced operational lifespan. Addressing this challenge, this research introduces an advanced active thermal control (ATC) strategy for a 3-phase dual converter system, employing field-oriented control (FOC) with discontinuous pulse-width modulation (DPWM) to drive permanent magnet synchronous machines (PMSM). By integrating transient thermal characterization into a support vector data descriptor (SVDD), this research achieves accurate estimation of virtual junction temperatures (Tvj), enabling more responsive thermal management. Simulations demonstrate the ATC system’s effectiveness, revealing a significant reduction in power loss. The proposed approach not only mitigates the risk of overheating but also promotes improved efficiency and longevity in SiC MOSFET-based power systems.