Benefits of .XT Interconnection Technology for 3.3 kV XHP 2 Module with 3.3 kV CoolSiC MOSFET
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262106
Proceedings: PCIM Europe 2024
Pages: 7Language: englishTyp: PDF
Authors:
Buerger, Matthias; Wassermann, Tobias N.; Foester, Henry
Abstract:
CoolSiCTM MOSFETs enable operation at higher frequencies for high-voltage applications in the 3.3 kV voltage class. Equipped with CoolSiC(TM) MOSFETs, the Infineon 3.3 kV XHP(TM) 2 module enables high power densities in applications such as traction. With the trend towards higher power densities, robustness against failure such as surge current and short circuits is becoming increasingly important. Furthermore, traction applications demand high power cycling capabilities to ensure an ample service life of the power module. Combined with the Infineon .XT interconnect technology in an XHP(TM) 2 package, CoolSiC(TM) MOSFETs can address these requirements for traction applications. This paper describes the performance of the XHP(TM) 2 3.3 kV CoolSiC(TM) MOSFET .XT module with regard to surge current, short circuit, and power cycling.