The 8th Generation LV100 IGBT Module with Higher Current Rating

Abstract:
This paper presents 8th generation 1800A/1200V IGBT power module designed for industrial applications. In this power module, cutting-edge 8th generation IGBTs and diodes are mounted. Significantly lower power losses can be achieved compared to conventional power module by adopting Split-Dummy-Active (SDA) gate structure and reducing chip thickness which can be realized by adopting Controlling charge carrier Plasma Layer (CPL) structure. In particular, the SDA structure reduces Eon approximately 60% with the same recovery dv/dt as the conventional module. By significant cutting of power losses, this module can increase power density. By adopting these technologies and expanding the chip areas, the 8th generation 1200V IGBT power module achieves a rated current of 1800A, which is 1.5 times higher than the conventional 1200V IGBT power module, in the same Mitsubishi Electric LV100-package. Key words: 8th generation, LV100-type half bride package, High current density, SDA gate structure, CPL structure