Accelerated Power Cycling of GaN HEMTs using Switching Loss and Fast Temperature Measurement
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262009
Proceedings: PCIM Europe 2024
Pages: 10Language: englishTyp: PDF
Authors:
Leung, Wing Tai; Niroomand, Mehdi; Jahdi, Saeed; Stark, Bernard H.
Abstract:
Power cycling is typically performed by periodically self-heating a power device using a DC current. This paper demonstrates a technique to boost the heating power to shorten the heating phase, by the addition of switching loss. This power cycling technique is demonstrated on 190 mOmega, 600 V Gallium Nitride (GaN) discrete devices, where it achieves 240,000 thermal cycles per week with a junction temperature swing