Fast Switching of High Power GaN Transistors
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091367
Proceedings: PCIM Europe 2023
Pages: 10Language: englishTyp: PDF
Authors:
Shelton, Ed; Rogers, Dan (University of Oxford, UK)
Lu, Lucas; Kou, Lei (GaN Systems, Canada)
Castellino, Juan (Cambridge Design Partnership, UK)
Palmer, Patrick (Simon Fraser University, Canada)
Abstract:
This paper presents a gate-driving strategy for achieving fast switching edges from GaN HEMT devices. Switching lasses can be reduced by using zero-ohms external gate resistance. Further reductions are achieved by overcoming the limitations of internal gate resistance with gate voltage boosting during key regions of the switching transition.