Characterization of Short Circuit Behavior of Parallel Connected GaN HEMT Power Semiconductors
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091362
Proceedings: PCIM Europe 2023
Pages: 10Language: englishTyp: PDF
Authors:
Schmitz, Jan; Meissner, Markus; Bernet, Steffen (Chair of Power Electronics, Dresden University of Technology, Dresden, Germany)
Abstract:
Galliumnitride (GaN) power semiconductor devices are available in a limited current range at nominal device voltages of typically 650V. A parallelization of GaN devices enables the realization of converters with increased power. Since GaN power semiconductors feature a high switching speed, a well-designed circuit layout is required to enable a symmetric current distribution of parallel GaN devices. The very fast short circuit protection is a further demanding challenge. This paper presents a characterization of the short circuit type 1 and type 2 behavior of parallel connected GaN HEMTs for different driving conditions. The influence of important design parameters is considered.