Measurement and Validation of Junction Temperatures of Chipsin Automotive Traction Modules at Inverter Level

Abstract:
One of the significant challenges encountered in the development and testing of traction-grade power modules at application level is the correlation of junction temperature during inverter level simulation with real-time operation. Most semiconductor manufacturers use existing models to predict the perfor-mance of higher power modules or next-generation technology. Hence, it is crucial to have accurate models. This paper proposes a reliable method to verify junction temperature obtained via MATLAB simulation with real-time junction temperature measured through an Infrared (IR) Camera during inverter level operation. The model validation is supported by test data obtained from Si IGBT and SiC MOSFET power modules developed at onsemi. This approach provides valuable insights into the accuracy of existing models and their capability to predict the behavior of power modules in real-world applications.