Accuracy Improvement to Estimate Power Semiconductor Losses Using Opposition Method

Abstract:
The accurate estimate of power losses is of the first importance for power electronic design. This paper presents a test bench based on the opposition method and the calorimetric method used to characterize the losses of SiC MOSFET modules. Electronic instrumentation is implemented to accurately measure the differential temperature, the flow rate, the water pressure and the current. To minimize the stray inductance, the power circuit is designed in the form of busbars. The first experimental tests will focus on the calibration of the new measurement system and try to estimate the various factors that influence the accuracy of the power losses measurements.