New 1200V e SiC MOSFET in Kelvin Source Package to Maximize Efficiency in xEV and Solar Applications

Abstract:
1200V SiC MOSFETs are quickly penetrating the EV charging station, and solar inverter as well as on board charger(OBC) applications. The power rating per one module of a DC EV charger is increasing from 15kW to 30kW, The topology is simplified from Vienna PFC and series LLC resonant converter by using 650V super-junction MOSFETs or IGBTs to B6 rectifier PFC and full bridge LLC by using 1200V SiC MOSFETs. 1200V SiC MOSFETs enable bidirectional charging up to 800V batteries. Increasing the PV array voltage of solar inverters up to 1500V (String Inverter) for end-to-end efficiency improvement and installation cost reduction.1200V SiC MOSFETs are the best solution for stable performance against switching frequency and temperature, enables high flexibility in overall system design, especially in out-door applications that is operated under harsh environments. The purpose of this paper is to highlight the key characteristics of Power Master Semiconductor’s new 1200V e SiC M1 MOSFET compared to competitor’s planar and trench 1200V SiC MOSFETs in both DC EV charging systems and solar inverter systems.