Design and Multiphysics Simulation of a PCB-Embedded-Package Enclosing a Gallium Nitride System on Chip Grown on a Novel Substrate
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091287
Proceedings: PCIM Europe 2023
Pages: 5Language: englishTyp: PDF
Authors:
Pradhan, Abinash; Moldaschl, Thomas; Hasan, Md. Nazmul; Schicker, Johannes; Binder, Alfred (Silicon Austria Labs GmbH, Austria)
De Doncke, Rik W (RWTH Aachen University, Institute for Power Electronics and Electrical Drives (ISEA), Germany)
Abstract:
This paper presents an advanced packaging concept, for a monolithic Gallium Nitride (GaN) System-on- Chip (GaN High Electron Mobility Transistor half-bridge with integrated gate drivers) grown on a Qromis Substrate Technology (QST(r)) substrate. Since the entire configuration is beyond the state of the art, its viability is assessed through multiphysics simulations before hardware prototyping. The concept is designed, simulated, and optimized in ANSYS considering the thermal management constraints. The thermal simulation results show that the maximum junction temperature is 78 °C for an estimated power loss of 25W, which is well below the rated value of 150 °C of the System-on-Chip. The fluid temperatures at the inlet and outlet are 25 °C and 44 °C, while the thermal resistance from the SoC junction to the coldplate is evaluated to be 0.16 K/W.