Advantage of Lead-Frame Wiring and High Reliable to Electromigration Package for High Power Density Automotive Power Module

Abstract:
The ruggedness to electrical and thermal stress is a key performance for power modules. Since power modules in automobile application are required to be high power density, electrical and thermal stress per unit area and volume are becoming serious level which conventional modules have not faced. Especially short circuit capability and electromigration are major concerns in a high power density power module because the heat capacity of chips and the area conducting current are smaller than conventional power modules. This paper shows impact on short circuit capability of lead-frame wiring in a thin wafer RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) and its benefit of electrical performance. In terms of electromigration reliability, an evaluation method is introduced and test results are described in this paper.