Inter-chip Oscillation of paralleled SiC MOSFETs
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091211
Proceedings: PCIM Europe 2023
Pages: 7Language: englishTyp: PDF
Authors:
Sawallich, Florian; Eckel, Hans-Guenter (University of Rostock, Institute for Electrical Power Engineering, Germany)
Abstract:
This paper analyzes the problem of instability between paralleled silicon carbide (SiC) MOSFETs. In certain parasitic conditions, self-excited oscillation of paralleled SiC MOSFETs occurs and forms a positive, oscillatory feedback loop. This kind of oscillation is called inter-chip oscillation and can lead to loss of control, resulting in device breakdown, decreased lifetime, or significantly higher EMI. This paper shows typical inter-chip oscillation characteristics, an extended analytical stability model is presented, and additional influencing factors beyond system damping are derived.