A Comparison of GaN HEMT and SiC MOSFET Power Inverter Modules for Electric Vehicles (EV)

Abstract:
In this paper, two GaN HEMTs and a SiC MOSFET device are compared in a virtual power module for inverters of electric vehicles (EV). Therefore scaled double pulse measurements are performed. The thermal environment of the module is taken into account in the calculations. Finally, the maximum current density, the required die areas, and the efficiency in the WLTP cycle are compared. GaN HEMTs reach nearly the same efficiency in the WLTP cycle as the SiC MOSFET and hence will be a good alternative for inverters in EV.