Characterization of 6.5 kV SiC MOSFETs with and without an Integrated On-Chip Schottky Diode
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091118
Proceedings: PCIM Europe 2023
Pages: 7Language: englishTyp: PDF
Authors:
Baker, Nick; Lemmon, Andy; Jimenez Cardenas, Sergio (University of Alabama, USA)
Abstract:
In this paper we compare 6.5kV Silicon Carbide MOSFET chips with and without an integrated Schottky diode. We assess theperformance at 25deg C and 125deg C in a double pulse test, as well as providing IV curve and Third Quadrant characteristics at both temperatures. The chips are tested in a custom halfbridge module. We find significantly improved switching performance from the integrated Schottky diode chip when operated at elevated temperatures.