Advanced SiC Trench-MOS Technology for Automotive Application
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091096
Proceedings: PCIM Europe 2023
Pages: 4Language: englishTyp: PDF
Authors:
Schwaiger, Stephan; Heyers, Klaus; Martinez-Limia, Alberto; Oberdieck, Karl; Foerster, Christian (Robert Bosch GmbH, Automotive Electronics, Germany)
Abstract:
SiC-Trench-MOSFETs (T-MOS) exhibit a large potential in RDSONxA reduction, especially in the VDS = 1200 V class but also for VDS = 750 V due to reduced cell pitch size compared to VDMOS-structures. However, for automotive drive application, switching performance and a necessary overload robustness must be achieved as well. This trade-off could be adjusted using multi-objective optimization. As a result, the RDSON*A of the T-MOS Gen2 could be reduced by 26%, while switching transients di/dt could be improved by 75% compared to Bosch previous T-MOS Gen1.