Switching Behaviour of a SiC-MOSFET 3-Level ANPC Inverter with Different Modulation Schemes
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091085
Proceedings: PCIM Europe 2023
Pages: 6Language: englishTyp: PDF
Authors:
Haering, Johannes; Bakran, Mark-M. (University of Bayreuth, Department of Mechatronics, Centre for Energy Technology, Germany)
Hepp, Maximilian; Wondrak, Wolfgang (Mercedes-Benz AG, Power Electronics Advanced Engineering, E-Motor Development and Power Electronics, Germany)
Abstract:
Wide band-gap devices are about to capture the power semiconductor market for electric vehicle applications since efficiency and power density are becoming more and more important. To gain highest efficiency in traction inverters, wide band-gap semiconductors can be used in 3-level structures. This paper deals with the switching behaviour of SiC-MOSFETs in an ANPC inverter with different modulation schemes by discussing switching processes of a scaled down experimental setup during operation. It shows the influence of secondary effects depending on the modulation scheme like additional parasitic turn-on losses, stray inductance in different commutation paths and the consequent loss distribution.