CoolSiC Trench MOSFET Chip Design for the 3.3 kV Class
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091079
Proceedings: PCIM Europe 2023
Pages: 6Language: englishTyp: PDF
Authors:
Leendertz, Caspar; Zeng, Guang; Schraml, Konrad (Infineon Technologies AG, Neubiberg, Germany)
Hell, Michael; Sochor, Paul; Elpelt, Rudolf; Peters, Dethard (Infineon Technologies AG, Erlangen, Germany)
Ganner, Thomas; Soellradl, Thomas (Infineon Technologies Austria AG, Villach, Austria)
Abstract:
Infineon’s CoolSiCTM technology has gained recognition for its 650 V and 1200 V silicon carbide MOSFETs with low on-state resistance, excellent switching performance, and Si IGBT-like reliability. This study aims to demonstrate how this technology can be tailored to facilitate devices operating at higher voltages, specifically at 3.3 kV, while upholding their reliability and high performance. This study also showcases the customization of a chip design for traction applications. The primary focus of this study has been the optimization of the chip for fast and soft switching in a large 1000 A XHP2(TM) module, and the reduction of saturation current at the chip level to significantly improve the module's short circuit ruggedness. Our results demonstrate the feasibility of this approach and highlight the potential of the CoolSiC(TM) technology to facilitate the development of robust, high-performance power electronics for high voltage applications, including traction.