A Novel 2200 V Schottky Barrier Diode-Embedded SiC MOSFET Module
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091078
Proceedings: PCIM Europe 2023
Pages: 6Language: englishTyp: PDF
Authors:
Ogata, Takahiro; Kono, Hiroshi; Irifune, Hiroyuki; Fujii, Saho; Tanaka, Tsuguhiro (Toshiba Electronic Devices & Storage Corporation, Japan)
Tchouangue, Georges (Toshiba Electronics Europe GmbH, Germany)
Abstract:
2200 V Schottky barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs) were fabricated with optimization of the chip design for the drift layer and cell structure. The developed SiC MOSFETs not only suppressed bipolar operation but also achieved low on-resistance and a sufficiently high blocking voltage. We examined the effect of two-level 2200 V SiC MOSFET circuits on the conversion efficiency of a power converter specifically for photovoltaic systems. The power loss was reduced by 37% compared with three-level circuits composed of Si insulated-gate bipolar transistors (IGBTs).