Avalanche Robustness of SiC MOSFETs in Parallel Connections
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091077
Proceedings: PCIM Europe 2023
Pages: 10Language: englishTyp: PDF
Authors:
Herrmann, Clemens; He, Mengdi; Alaluss, Mohamed; Basler, Thomas; Lutz, Josef (Chemnitz University of Technology, Germany)
Abstract:
In this paper, the avalanche robustness of SiC MOSFETs in parallel configurations of two devices was investigated. Device parameter deviations of breakdown voltage VBD are decisive for the development of current-sharing imbalances during the avalanche event. We study the extent to which these deviations affect the robustness of the overall parallel configuration, and in a comparison with single-device robustness, the extent to which derating needs to be considered. The investigations were carried out using a range of inductance values and corresponding critical avalanche times and energies.