Bonding Properties and Reliability Evaluation of Cu Sinter Paste for Pressure Sintering
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091074
Proceedings: PCIM Europe 2023
Pages: 5Language: englishTyp: PDF
Authors:
Hattori, Takashi; Yamauchi, Shinichi; Anai, Kei (Business Creation Sector, Mitsui Mining & Smelting Co., Ltd., Japan)
Abstract:
The bonding material of power semiconductor devices requires high thermal durability, conductivity and reliability. Much is expected from Cu sinter materials for bonding because they can meet these requirements. In this study, we investigated bonding properties, die backside metallization compatibility and reliability of our Cu sinter paste. It was confirmed that it provides good bonding and is compatible with Au and Ag metallized layers. It was also found that the bonding sample maintains a good bonding state even after Thermal Cycling Test (TCT) and High Temperature Storage (HTS) test. These results suggest that our Cu sinter paste can be a bonding material for power semiconductor devices.