Development of Ag-free active metal brazing filler for manufacturing copper-Si3N4 substrates
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091031
Proceedings: PCIM Europe 2023
Pages: 6Language: englishTyp: PDF
Authors:
Mori, Yoichiro; Fujisawa, Sachiko; Morimoto, Kazumitsu; Yonei, Masakazu; Kato, Hiromasa; Suenaga, Seiichi (Toshiba Materials Co., Ltd., Japan)
Abstract:
Toshiba Materials Co., Ltd. has enabled the manufacture of insulating circuit substrates by developing silver free brazing (SFB) technology for bonding copper to silicon nitride. In active metal brazing, the reaction of titanium (Ti) with ceramics is important for reliable brazing. Therefore, we examined the composition of a SFB filler focusing on the Ti content and found that it was possible to form a dense and continuous interfacial reaction layer similar to a conventional Ag alloy filler. The SFB substrate also had suitable properties for practical use.