Trench IGBT with FS2 Technology Platform for Low Loss and High Robustness Applications
Conference: PCIM Asia 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10/26/2022 - 10/27/2022 at Shanghai, China
Proceedings: PCIM Asia 2022
Pages: 4Language: englishTyp: PDF
Authors:
Zhang, Ken; Zhu, Charlie; Jiang, Ke; Xu, Bo; Shi, Jinshan; Yin, Randy; Zuo, Huiling; Fang, Jimmy; Xiang, Junli; Cai, Boger; Huang, Katherine; Duan, Jason (Nexperia (China) Ltd., Huangpu District, Shanghai, China)
Abstract:
In this paper, trench insulated gate bipolar transistor (IGBT) with field stop 2 (FS2) technology platform is first time demonstrated by Nexperia. FS2 technology is proposed and developed to cover a wide range of switching frequency with high efficiency and robustness. In medium speed scope [20kHz or less], the device with the current and voltage ratings of 40A and 1200V, respectively exhibits a remarkable 20% total loss reduction in terms of On-state and switch losses comparing with state-of-the-art products on the market. In high-speed application [20-40kHz], it features more robustness, while keeps similar trade-off performance between Vcesat and Eoff when compared to state-of-the-art products.