Si3N4 Substrate Metallization

Abstract:
The wide bandgap power devices with the junction temperature up to 200deg C are expected to play a much bigger role in the next decades, especially in the high-power traction inverter and mid-power converter applications. The higher junction temperature is challenging the already existing packaging material. The higher thermal conductivity ceramic substrate is a key material to package the wide bandgap power devices. The metalized Si3N4 substrate is the best candidate material. The two kinds of the process of Si3N4 substrate metallization are compared.