Efficient and Robust 750 V SiC MOSFETs for Electric Vehicles
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822154
Proceedings: PCIM Europe 2022
Pages: 6Language: englishTyp: PDF
Authors:
Jadav, Sumit; Singh, Ranbir; Sudaresan, Siddarth; Mulpuri, Vamsi; Park, Jaehoon (GeneSiC Semiconductor, Inc., USA)
Abstract:
Advancements in Silicon Carbide (SiC) MOSFET technologies, both in terms of design and processes, have accelerated their adoption in automotive traction inverters. However, there are significant differences in the SiC MOSFET technologies existing in the industry today, and how these differences can impact the overall cost, size, performance and robustness of the traction inverter need more discusion. This paper compares industry-leading 750 V SiC MOSFET devices with typical on-state resistance of 10 mOmega to 12 mOmega at room temperature, popular in power modules designed for electric vehicle (EV) traction inverters. Furthermore, using accurate physics-based SPICE models, power loss simulations are carried out on vehicle drive cycles to determine most efficient and robust design trade-offs. The discussed 750 V SiC MOSFET chips with specific on-state resistance of 2.18 mOmega-cm2 (Gen3) and 1.95 mOmega-cm2 (Gen4) at room-temperature are produced for use in top-side and back-side sinterable module assembly processes.