Experimental Study on Turn-off Process of Medium Voltage SiC MOSFET Modules
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822110
Proceedings: PCIM Europe 2022
Pages: 8Language: englishTyp: PDF
Authors:
Rabkowski, Jacek; Zdanowski, Mariusz (Warsaw University of Technology, Poland)
Gonzalez-Hernando, Fernando; Villar, Irma (Ikerlan Technology Research Centre, Basque Research and Technology Alliance (BRTA), Arrasate-Mondragón, Spain)
Larranaga, Uxue (CAF Power & Automation, San Sebastian, Spain)
Abstract:
This paper shows experiments conducted with 1.7kV/900A and 3.3kV/450A SiC MOSFET power modules to find a real turn-off loss EOFF without displacement current component. This issue is essential in an electro-thermal design of soft-switched DC-DC converters. The channel current of the MOSFET is separated from the drain current based on the input transfer characteristic iD=f(VGS(INT)). As various effects such as drain-induced barrier-lowering (DIBL) or interface charge traps affect the transfer characteristic of medium voltage SiC MOSFETs, different tests were conducted using single pulse procedures to identify the factors that influence the most this input transfer characteristic, such as VDS and VGS.