Towards Digital Twins for the Optimization of Power Electronic Switching Cells with Discrete SiC Power MOSFETs
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822104
Proceedings: PCIM Europe 2022
Pages: 8Language: englishTyp: PDF
Authors:
Race, Salvatore; Nagel, Michel; Kovacevic-Badstuebner, Ivana; Ziemann, Thomas; Grossner, Ulrike (Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland)
Abstract:
Layout optimization of power electronic switching cells is highly important for the design of high-efficiency fast-switching power converters. The aim of this paper is to identify PCB layout design parameters leading to an improved layout design with respect to low switching losses and low electromagnetic interference. A digital twin of the switching cells containing discrete silicon carbide power devices was developed and verified by double-pulse measurements. The results identify and quantify the non-negligible influence of the layout parasitic capacitances on the optimization of switching losses. The observed modeling challenges point towards the need for more accurate EM modeling techniques for power electronics applications and for standardization of SiC power MOSFET Spice models.