3.3 kV 800 A Next High Power Density Dual Si IGBT Module with High Power Cycle Durability
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822082
Proceedings: PCIM Europe 2022
Pages: 6Language: englishTyp: PDF
Authors:
Arai, Taiga; Makabe, Kanta; Moritsuka, Tsubasa; Tabata, Toshihito; Tadano, Akiyoshi; Yoshida, Isamu; Konno, Akitoyo; Sasaki, Koji; Kawase, Daisuke; Kushima, Takayuki; Yasui, Kann; Saito, Katsuaki (Hitachi Power Semiconductor Devices Ltd, Japan)
Furukawa, Tomoyasu (Hitachi Ltd, Japan)
Abstract:
To meet market demands for longer power cycle durability, improvements to die attachment and wire bonding of the chip surface are being promoted. In this report, an improvement in power cycle durability, reaching up to twenty-five times latest Sn-based die attach methods, is confirmed by the application of sintered copper and improved Al wire bonding to the next generation standardized dual package with low inductance. By capitalizing on an increased junction operation of 175deg C to a 3.3 kV voltage class device, equipped with a low-loss side gate IGBT and high power cycle durability enabled, the ampere rating of a new Si IGBT module was confirmed to increase from 600 A to 800 A.