Improving the VF-IR Trade-Off in 650-V/1200-V SiC SBD by Development of Schottky Metal and Optimization of Device Structure
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822041
Proceedings: PCIM Europe 2022
Pages: 6Language: englishTyp: PDF
Authors:
Tanihira, Kei; Hori, Yoichi; Yamamoto, Yoko; Adachi, Yuto; Ogata, Takahiro; Asaba, Shunsuke; Kobayashi, Masakazu; Kono, Hiroshi; Hayakawa, Hideki; Tsuyuguchi, Akihiro (Toshiba Electronic Devices & Storage Corporation, Japan)
Tchouangue, Georges (Toshiba Electronic Europe GmbH, Germany)
Abstract:
A 650-V/10-A-class SiC Schottky barrier diode is demonstrated that has low VF of 1.19 V while limiting IR to 1.6 muA. This outstanding trade-off is realized by developing the Schottky metal and optimizing the junction barrier structure. The fabricated device exhibits superior temperature stability with a small increase in VF under high-temperature operation, although the increase in IR is similar to that of conventional devices. No thermal runaway, or degradation of VF or IR is observed under high-temperature and high-voltage stress. The developed device improves the efficiency of electric energy conversion equipment by 0.1% when used in a power factor correction circuit.