TCL-based Parallel Study of 3.3kV Full SiC Power Modules

Abstract:
The application of silicon carbide (SiC) power modules could reduce power loss and improve the performance of power electronic equipment. Sometimes the current rating of a single SiC power module cannot meet the system demand, especially in high voltage applications over 2000Vdc. In this case, parallel application of SiC power module is required. Transient consistency is the key point for parallel design, here a new design concept of Transient Commutation Loop (TCL) was proposed for countermeasure, aiming at keeping the good current balance for each paralleled power module and reduce the surge voltage of VDS during SiC MOSFET turn-off. This TCL-based parallel design with 3.3kV Full SiC MOSFET modules was tested in our lab, and the measured wave-forms show that the transient performance of the parallel modules is very good.