Low stray inductance automotive power module using SiC Chips and welded power terminals
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 5Language: englishTyp: PDF
Authors:
Pluschke, Norbert (SEMIKRON (Hong Kong) Co., Ltd. Hong Kong SAR, China)
Abstract:
Power module packaging has been challenged by recent SiC chip developments. Today SiC MOSFET chips with current ratings up to 100A are commercially available. Special automotive applications are asking for high current fast switching SiC MOSFET power modules above 800A rated current. Heavy paralleling of SiC chips is necessary to achieve these power levels.