1700V rated All SiC module with 2nd generation trench gate SiC-MOSFETs
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 6Language: englishTyp: PDF
Authors:
Takasaki, Aiko; Kani, Tomoyuki; Okumura, Keiji; Maruyama, Rikihiro; Kusunoki, Yoshiyuki; Kobayashi, Yasuyuki (Fuji Electric Co., Ltd., Japan)
Song, Chen (Fuji Electric China, China)
Abstract:
Recently, the demand for downsizing and higher efficiency of power conversion systems has been increasing in order to realize a low carbon society. For this reason, enhancing power density of power semiconductor modules is an important factor to achieve this goal. We developed electrical characteristics for a newly developed 1700V/300A All SiC module with 2nd generation trench gate SiC-MOSFETs (Silicon Carbide, Metal Oxide Semiconductor Field Effect Transistors). It has been demonstrated that a significant increase of output power in power conversion units could be achieved by using the All SiC module compared with conventional Si-IGBT (Silicon, Insulated Gate Bipolar Transistors) modules.