PCIM Asia 2021
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3.3kV SiC Power MOSFETs with High–k Gate Dielectric

Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China

Proceedings: PCIM Asia 2021

Pages: 5Language: englishTyp: PDF

Authors:
Romano, Gianpaolo; Mihaila, Andrei; Knoll, Lars (Hitachi ABB Power Grids Ltd., Semiconductors, Lenzburg, Switzerland)

Abstract:
The channel contribution of the overall resistance of planar 3.3kV MOSFETs was investigated and improved by using a high-k gate dielectric. Despite a somehow large pitch, the channel contribution could be reduced significantly. In dynamic characterization the increased input capacitance did not show a reduction in switching speed. Moreover, reliable repetitive operation and rugged behavior in RBSOA could be demonstrated.