New Developed 1000A/6500V IGBT Module Based on TMOS+ IGBT and PIC FRD Technology
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 5Language: englishTyp: PDF
Authors:
Zhou, Feiyu; Wang, Hui; Zhu, Liheng; Liu, Pengfei; Xiao, Haibo; Qin, Rongzhen; Xiao, Qiang; Luo, Haihui (State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, China & Zhuzhou CRRC Times Semiconductor Co. Ltd., Zhuzhou, China)
Abstract:
A new 1000A/6500V IGBT module with Enhanced Trench Metal Oxide Semiconductor (TMOS+) IGBT and P-doped Island of Cathode (PIC) FRD is introduced in this paper. By implementing optimized chip thickness and buffer design, we realized low conduction loss, high robustness TMOS+ IGBT chip. Compared with last generation IGBT chip, TMOS+ IGBT has 30% lower Eoff and 10% lower Eon with the same Vceon. By employing PIC technology, the new FRD has about 10% lower Vf and 40% lower Erec. Moreover, new IGBT could successfully turn-off 6.7 times rated current and the new FRD’s peak reverse recovery power is as high as 12MW, which indicates the module has wide SOA and good ruggedness.