Advanced Edge Termination Design for 1200V Rated Thin Wafer Fast Recovery Diodes Shows Lower Leakage Current and Higher Operating Temperature up to 200℃
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 4Language: englishTyp: PDF
Authors:
Liu, Pengfei; Qin, Rongzhen; Hu, Wei; Wang, Mengjie; Xiao, Qiang; Luo, Haihui (State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, China & Zhuzhou CRRC Times Semiconductor Co. Ltd., Zhuzhou, China)
Abstract:
In this paper, an advanced edge termination de-sign based on 1200V FRD is proposed. The new edge termination features multiple field plates (MFP) in conjunction with field-limiting rings (FLR) structure, which use insulating passivation layer instead of semi-insulating passivation layer. As a result, the leakage current decreases 50% com-pared with the conventional FRD. Combined with the optimized wafer thickness, the VF are reduced by 8%. Meanwhile, with the present 1200V FRD chips, the module maintains a high temperature robustness and pass the 200 °C 90%Vr 168h HTRB test, and shows high RRSOA ruggedness.