Fabrication and characterization of 3.3kV SiC MOSFET with embedded Junction Barrier Schottky Diode
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 4Language: englishTyp: PDF
Authors:
Zheng, Changwei; Liu, Qijun; Wang, Yafei; Ma, Yachao; Li, Lele; Lu, Wuyue; Li, Chengzhan (State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., Ltd., China)
Abstract:
In this paper, a 3300V SiC MOSFET with embedded junction barrier Schottky diode (JMOS) was fabricated. Titanium and nickel were used to form Schottky contact and Ohmic contact respectively. An optimized surface treatment process was adopted to improve the leakage performance of gate-source while the Ohmic contact has no degradation. It was found that the surface treatment resulted in more than 75% reduction in the failure rate of gate-source leakage current (Igss). The JMOS with considerable performance was achieved successfully.