Enhancement of Switching Performance and Output Power Density in 3.3 kV Full SiC Power Module
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 5Language: englishTyp: PDF
Authors:
Morikawa, Takahiro; Hayakawa, Seiichi; Yasui, Kan; Murata, Tatsunori; Kinoshita, Koyo; Oda, Tetsuo; Takayanagi, Yuji; Saito, Katsuaki (Hitachi Power Semiconductor Device Ltd., Japan)
Masuda, Toru (Research & Development Group, Hitachi Ltd., Japan)
Abstract:
Hitachi’s latest full SiC power module is described. To achieve increase of the output current density and higher speed operation, the switching characteristics of an existing SBD-less module were improved by adopting new internal component devices. An important aspect of the modification is the use of a gate resistor with a small temperature coefficient to adjust the switching speed whilst suppressing undesirable oscillations. Through this modification, the total switching losses at Tj = 175deg C were decreased by approximately 30%, and maximum output current was increased by 20% compared to the conventional version. These enhancements will contribute to an increase in output power and carrier frequency, enabling exceptional system design opportunities featuring low harmonic losses and compact passive components.