Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 8Language: englishTyp: PDF
Authors:
Sharma, Ankit Bhushan; Huesgen, Till (Electronics Integration Lab, University of Applied Science Kempten, Germany)
Weimer, Julian; Koch, Dominik; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems, University of Stuttgart, Germany)
Abstract:
This paper proposes an asymmetric Single-Chip-Prepackage (SCP) with thick Cu substrate for the optimum electrical and thermal performance of the GaN-HEMT devices. Additionally, the package features a Ni-based integrated thermistor. Laboratory demonstrators have been fabricated using PCB embedding technology. A full electrical characterization of the packaged device indicates full functionality. The temperature coefficient of the integrated temperature sensor is α = 0.00541 /K. Thermal characterization of the SCP shows a junction to heatsink thermal resistance Rth,jh = 3.34 K/W, which is 36 % less than the commercial reference device. A silver sinter based assembly process for system integration of SCP is introduced in view of a planar thermal interface. In a 300 kHz 48 V to 24 V buck-converter operation with 60 Arms output current, a 98% efficiency is achieved.