Hybrid Switch with SiC MOSFET and fast IGBT for High Power Applications
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 6Language: englishTyp: PDF
Authors:
Kayser, Felix; Eckel, Hans-Guenter (University of Rostock, Germany)
Baburske, Roman; Brandt, Philip; Queitsch, Ute (Infineon Technologies AG, Germany)
Abstract:
The switching speed of SiC MOSFETs in high-power converters has to be reduced to limit overvoltage and dv/dt stress of the load. This limited switching speed can also be reached with high-speed IGBT chips. However, high-speed IGBTs have a high on-state voltage. This paper describes a new Si SiC hybrid approach, in which the IGBT is used for fast switching, and the MOSFET for low on-state voltage. Experimental results with scaled 1.2 kV chips, 1.7 kV chips and calculations of efficiency and output power are shown.