SiC Power Device Evolution: Characteristics Analysis and Performance Comparison of Gen2 and Gen3

Abstract:
Wide Band Gap (WBG) devices represent the new generation of power switching devices. Due to their unique electrical characteristics, these devices are considered as the main candidates for replacing conventional Si devices in the coming future. The adoption of several optimization methods, based on the revolutionary principles introduced with WBG materials, has led to the emergence of different technologies such as the Gen3. This is the 3rd and latest generation of silicon carbide (SiC) Power MOSFETs belonging to the STPOWER family. The purpose of this paper is to highlight the main characteristics that differentiate the two SiC technologies, the well-known Gen2 vs the newcomer Gen3, allowing you to choose the one that best fits your application needs.