A Three-Phase GaN-on-Si Inverter IC for Low-Voltage Motor Drives
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 7Language: englishTyp: PDF
Authors:
Moench, Stefan; Reiner, Richard; Benkhelifa, Fouad; Basler, Michael; Waltereit, Patrick; Quay, Ruediger (Fraunhofer Institute for Applied Solid State Physics (IAF), Germany)
Abstract:
A GaN-based monolithic three-phase inverter IC is presented. The high-side and low-side transistors are intrinsically interleaved in each phase for low area-specific on-resistance and strong thermal coupling. Electrically, the effect of capacitive substrate coupling is investigated for SVPWM. A substrate biasing network for semi-floating substrate termination of the three-phase IC is proposed to minimize negative back-gating. Thermally, a low 5.6 µm pitch between the interleaved high-/low-side transistor fingers, and 625 µm phase-to-phase pitch reduces the temperature ripple at the kHz-range (from switching) and Hz-range (from phase-shifted currents) compared to discrete transistors.