Simplified Method to Analyze Drive Strengths for GaN Power Devices
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 8Language: englishTyp: PDF
Authors:
Bulut, Enis Baris (Trakya University, Edirne, Turkey & Istanbul Technical University, Istanbul, Turkey)
Gulbahce, Mehmet Onur (Fatih Sultan Mehmet Vakif University, Istanbul, Turkey)
Kocabas, Derya Ahmet (Istanbul Technical University, Istanbul, Turkey)
Dusmez, Serkan (Arcelik Global, R&D Department, Istanbul, Turkey)
Abstract:
GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models.