Parallel SiC Power Modules for the Use in High Current 3-level-ANPC Inverters with high Requirements on Output Frequency and THDi

Abstract:
The rising complexity of frequency inverters results also in even higher requirements on power modules. E.g., high current inverters with high requirements on the output frequency and the total harmonicdistortion require power modules with high current handling capacity at high switching frequencies. Bothrequirements can be fulfilled just by operating high current Full-SiC power modules in parallel. The article describes a driver for two high current SiC MOSFET modules in parallel connection. The impact of gate driving conditions on the symmetry of current sharing will be investigated and measurement results of normal operation will be shown. Furthermore, the behavior in the case of short circuits at the modules output will be examined, the test results will be shown and the response time will be calculated.