Mitigation of IGBT Gate Oscillation during Short Circuit through Module Layout Improvement
Conference: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11/16/2020 - 11/18/2020 at Shanghai, China
Proceedings: PCIM Asia 2020
Pages: 3Language: englishTyp: PDF
Authors:
Ke, Haotao; Teng, Yuan; Qin, Guangyuan; Feng, Huiyu; Yu, Wei; Peng, Yongdian; Tang, Longgu (Zhuzhou CRRC Times Semiconductor Co., Ltd., China)
Abstract:
Gate oscillation during IGBT module short circuit is studied in this work. The distributions of carriers and electric field are simulated through Sentaurus TCAD. Mix-mode simulation is used for identifying influence of package parasitic on the gate oscillation. Elimination of the gate oscillation is achieved through module layout improvement.