Short-circuit-current protection of SiC power MosFet including characterization by measurement

Abstract:
Short circuit measurements always introduce special challenges to the measurement setup and equipment. Especially in the area of silicon-carbide (SiC) MosFet where very low DC-link inductances are needed the shortcircuit currents will achieve high values with very steep slopes. Not only the measurement but rather the restrainment of these currents is a challenge as well. This paper will show a measurement setup to verify the reliable detection and limitation of short circuit events at a low inductive DC busbar. The analysis of the results is based on specially designed and carefully calibrated measurement equipment including a self-made Rogowski coil. The measurement results are presented as well as the characterization, verification and calibration of this Rogowski coil.