Method for Compensating the Effects of GaN-HEMTs on the Output Voltage in Inverters during Dead Time
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 8Language: englishTyp: PDF
Authors:
Kohlhepp, Benedikt; Lanvermann, Tim; Duerbaum, Thomas (Friedrich-Alexander University Erlangen-Nuernberg, Germany)
Abstract:
By using GaN-HEMTs in three-phase inverters, significantly higher switching frequencies can be achieved compared to conventional Si-MOSFETs. However, as the switching frequency increases, the influence of the GaN-HEMTs on the waveform of the output voltage also rises during dead time. Therefore, this paper demonstrates a procedure that compensates the influence of dead time, reverse conduction of GaN-HEMTs and the switching transition.