Measurement of Temperature-Sensitive Parameters of SiC Power Semiconductors during Turn-Off using a Time-to-Digital Converter

Abstract:
This paper deals with the investigation on thermo-sensitive electrical parameters (TSEP) for silicon carbide (SiC) power semiconductors, which can be represented by the turn-off delay. The turn-off switching delay depends on several external parameters and characteristics of the semiconductor. Some regularities of these parameters are metrological proven in the paper. The paper gives a contribution to the development of condition monitoring systems for SiC-semiconductors e.g. in automotive inverter applications. It addresses the occurring problems and shows the implementation effort with a Time-to-Digital Converter (TDC). Finally, a method is presented which allows the recording of the turn-off delay during switching operation.