Experimental Evaluation of Simulation Model for Power Losses Estimation using 1200 V SiC MOSFET
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 6Language: englishTyp: PDF
Authors:
Jappe, Tiago; Voglitsis, Dionisis (ON Semiconductor, Solution Engineering Center – SEC, Munich, Germany)
Mussa, Samir Ahmad (Federal University of Santa Catarina, Florianopolis, Brazil)
Abstract:
Simulation Models are experimental evaluated for conduction and switching losses parameters in order to support proper power converter losses estimation. Firstly, Spice–models are used and experimental validated by proper double-pulse test. Based on correlated experimental and simulation losses parameters, the power converter semiconductor losses can be mapped based on power converter operation points. For this approach 1200 V SiC power devices are used as reference for analysis. The experimental results verify high–accuracy of power losses estimation based on the proposed methodology.