Heat dissipation strategies for silicon carbide power SMDs and their use in different applications

Abstract:
Heat dissipation is a limiting factor in the performance of many power electronic components. Especially in the TO-263-7 package, which is used for several SiC-MOSFETs, the heat transfer must take place through the cross section of the printed circuit board (PCB) to the heatsink at the bottom side. Most commonly, thermal vias are used to form this path in a perpendicular direction through all PCB-layers. In a given soft- and hard switched example applications with the use of C3M0065090J SiC-MOSFETs, this conventional approach limited the component’s maximum heat dissipation to approx. 13 W. A recent alternative approach are massive copper blocks (”pedestals”) being integrated in PCBs and reaching from their top- to the bottom-side in relevant footprint areas under SMD-housed power semiconductors. Pedestals allowing to increase the heat dissipation in the given case to even 36 W. This step is achieved due to the clearly superior heat spreading capability of that massive thermal connection between SiC-MOSFET and heatsink. For the hard switched example application the number of switch-elements can be halved to one, by using the pedestal instead of thermal vias. Independently of optimizing the heat transfer path, the up-front avoidance of losses helps to stay within existing heat dissipation limits, of course. The dominant conduction losses of the mentioned soft-switched example application could be halved by changing to SiC-MOSFET types with significant lowered RDSon. By using pedestals and changing to SiC-MOSFETs with lowered RDSon, the number of switch-elements can also be halved for the soft switched application.