Improvement of Dynamic Characteristics of discrete 1200V SiC MOSFETs through Kelvin Source connection

Abstract:
Especially in hard switching topologies, the operation of SiC MOSFETs is limited by the package parasitic inductances. To overcome this issue, TO247-4 offers separated Source pins, including a Kelvin connection. As in other devices, like IGBTs, this will increase the commutation speed. Very important for SiC MOSFETs though, the gate waveforms will be free of induced voltages due to current slopes. It helps the designer to stay inside the gate voltage absolute maximum rates. This paper presents a practical study done on discrete SiC MOSFETs. It compares the same device inside different packages, with and without the Kelvin connection